ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,722, issued on Nov. 3, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method of forming patterned features" was invented by Yoa... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,723, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanji... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,724, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Neutral stress diamond-like carbon" was invented by Ji... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,725, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo). "Selective deposition on an existing patterned mask" was invented by Ale... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,726, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing method and substrate processing apparatus" was inv... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,727, issued on Nov. 3, was assigned to Hangzhou HFC Semiconductor Co. (Hangzhou, China). "Isolation structure for eDRAM and method for makin... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,728, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and method f... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,729, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of forming patterns, package, ... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,730, issued on Nov. 3, was assigned to Lam Research Corp. (Fremont, Calif.). "Electrodeposition of cobalt tungsten films" was invented by Ti... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,731, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Method of forming interconnect for semiconductor devic... और पढ़ें